Graphite-containing Silicon Carbide
We produce silicon carbide ceramic products in pressureless sintering method, whose feature is to take comprehensive techniques that improve sintering to make sintered blanks of silicon carbide achieve the theoretical density of over 98% (the theoretical density of silicon carbide ceramics is 3.21g/cm3) and the silicon carbide content of over99%. Obtained silicon carbide ceramic sintered bodies have outstanding performance, and its strength that does not decrease in 1600oC so that it is particularly suitable for wear-resistant, corrosion-resistant and high-temperature-resistant conditions, such as gasket ring, pump elements, grinding media, blast nozzles,  

bulletproof laminates etc. The product is our major product. Performance characteristics: good self-lubricating property, low coefficient of friction (about 0.2), having higher strength than pure graphite material, small density (1.65g/cm3), having self-lubricating properties similar to graphite materials, but better wear resistance than graphite material, suitable for mass production. Suitable for: workpieces with high requirements of resistance to dry friction such as gasket rings in machines with possible dry friction, sliding bearings of magnetic pumps or shield pump, valve opening and closing parts with high requirements of corrosion resistance etc.


 

Scanning Electron Micrograph - 200µm
Scanning Electron Micrograph - 50µm
Scanning Electron Micrograph - 30µm

 

 

Performance

Unit

Pressureless Sintered 
Silicon Carbide

Adopted Standard

Purity

SiC-Wt% 70 -

Graphite content

Wt% 30 -

Other oxides

Wt% 0 -

Density

g/cm3 2.65 ASTM C 20

Grain size

μm - -

Modulus of elasticity

MPa 246 ASTM C 848

Compression strength

GPa - -

Bending strength

MPa 160 GB/T6569-2006

Fracture toughness

MPa m1/2 - -

Hardness

HK500 1000-1200 GB/T16534-2009

Poisson ratio

  - -

Specific heat capacity

J/kg K - -

Heat conductivity

W/m K 125 ASTM C 408

Coefficient of thermal
 expansion

10-6K-1 (0-1500oC) - -

Weibull modulus

  - -

Maximum service 
temperature

oC 1350 -

  We have improved the present production process of graphite-containing silicon carbide ceramics to increase the performance of graphite-containing silicon carbide and expand its usable range. Differences between SIC30 graphite-containing silicon carbide ceramics and GS-SIC graphite-containing silicon carbide ceramics

Item

SiC30

GS-SIC

Production method

 

The initial state of matrix structure is composed of multihole particulate artificial graphite powder blanks. During sintering process, the mentioned graphite powder blanks will be put in molten free silicon for its penetration into the holes of graphite to react with graphite and generate silicon carbide. The sintering process will continue reaction until the holes are fully filled with silicon carbide and a small amount of free silicon. The sintering process is completed at a temperature of 1400 °C. The initial state of the matrix structure is composed of pressed multihole artificial graphite powder and free silicon powder. Then it is put in molten free silicon for its penetration into the holes of graphite under a gas pressure of 1-10MPa to react with graphite and generate silicon carbide. The sintering process will continue reaction until the holes are fully filled with generated silicon carbide. Then the mentioned workpieces will be sintered in vacuum sintering furnace so that free silicon and graphite powder will eventually completely react into silicon carbide.

Structure

The microstructure is an interpenetrating network of graphite and silicon carbide. Some holes are filled with a small amount (approximately 4% Wt%) of free silicon, presenting bright white spots. Graphite phase presents dark spots. The microstructure is an interpenetrating network of graphite and silicon carbide without free silicon. The whole matrix structure presents a uniform color with some graphite phase presents dark spots, and the number relates to the lattice phase of graphite.

Organic uniformity

Thick parts may easily lead to uneven immersed silicon, high free silicon content on surface while little in core, and no reaction between a large amount of graphite and free silicon reaction. Therefore a large number of pores emerge, forming the defects of lacking graphite content on surface, poor lubricating performance, and poor corrosion resistance.  

Ingredient

Mainly includes about 62% of silicon carbide, about 35% of graphite, and about 3% of free silicon. The volume is composed of 53% of silicon carbide, 43% of graphite, and about 4% of silicon. About 95% of silicon carbide is composed of cubic β-silicon carbide, and 5% is α-silicon carbide.

Mainly includes about 70% of silicon carbide, about 30% of graphite, and no free silicon. About 95% of silicon carbide is composed of α-silicon carbide.

Chemical properties

Mainly silicon carbide and graphite. Containing 4% of free silicon. Silicon carbide and graphite are highly resistant to corrosive substances, and the overall corrosion resistance depends on the content of free silicon. Poor corrosion resistance of free silicon results in separation of matrix silicon carbide from graphite, leading to the material's decreasing strength in corrosive media and serious impact on service life. Not suitable for strong acid and alkali conditions. Mainly silicon carbide and graphite without free silicon. Silicon carbide and graphite are highly resistant to corrosive substances, and the overall corrosion resistance is good. Strength is not affected in corrosive media, and service life is long.

Physical properties

The main physical data are listed in the performance table. The main physical data are listed in the performance table.

Resistance to high temperature

As graphite is easily oxidized in oxidizing atmosphere, the use temperature cannot be higher than 650 °C. Neither graphite nor silicon carbide is oxidized in non-oxidizing atmosphere, but this contains free silicon whose melting point limits the maximum use temperature of not higher than 1350 °C. As graphite is easily oxidized in oxidizing atmosphere, the use temperature cannot be higher than 650 °C. In non-oxidizing atmosphere, because of no free silicon, the maximum use temperature can reach 1650 °C without reducing strength.。

Resistance to heat shock

   

Scope of application

Gas, liquid gasket rings and sliding bearings in conditions without lubrication or corrosive media. Up to 550 °C for long-term service in oxidizing atmosphere, and up to 1100°C for long-term service in non-oxidizing atmosphere. Particularly suitable for gasket rings in gas and liquid sealing elements in conditions of strong acid, alkali and other corrosive media with no lubrication, and sliding bearings for various noncorrosive pumps with possible dry friction. Available to assemble with graphite or pressureless sintered silicon carbide ceramic and can obtain better effect if assemble with itself. Up to 550 °C for long-term service in oxidizing atmosphere, and up to 1650°C for long-term service in non-oxidizing atmosphere.

 


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